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D. Mao, L. Peng, and J. Hopwood,
On-wafer Tunable
Deposition Rates using Ionized Physical Vapor Deposition ,
to appear in Plasma Processes and Polymers (Wiley-InterScience,
2006).
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J. Hopwood, F. Iza, S. Coy, and D. Fenner,
A
microfabricated atmospheric-pressure microplasma source
operating in air, Journal of Physics D: Applied Physics,
Vol. 38, 1698-1703 (2005).
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Felipe Iza and Jeffrey A. Hopwood, Split-ring Resonator
Microplasma: Microwave Model, Plasma Impedance and Power
Efficiency, Plasma Sources - Science and Technology
(Institute of Physics), Vol.14, 397-406 (2005).
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Felipe Iza and Jeffrey A. Hopwood, Self-organized
filaments, striations and other non-uniformities in non-thermal
atmospheric microwave excited microdischarges, IEEE
Transactions on Plasma Science, Vol. 33(2) 306-307 (2005).
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Xiaoji Yang and Jeffrey A. Hopwood,
Physical mechanisms
for anisotropic plasma etching of cesium iodide, Journal of
Applied Physics, Vol. 96(9), 4800-4806 (2004).
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J. Hopwood and F. Iza, Ultrahigh frequency microplasmas
from 1 Pascal to 1 Atmosphere, Journal of Analytical Atomic
Spectrometry, Vol. 19, 1145-1150 (2004).
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D. Mao and J. Hopwood, Ionized Physical Vapor Deposition
of Titanium Nitride: A Deposition Model, Journal of Applied
Physics, Vol. 96(1), 820-828 (2004).
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F. Iza and J. Hopwood, Rotational, vibrational and
excitation temperatures of a microwave-frequency microplasma,
IEEE Trans. Plasma Sci. 32(2), (2004) (to appear)
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J. Hopwood and T. Mantei, Application-driven development
of plasma source technology, J. Vac. Sci. Technol. A 21,
S139 (2003).
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O. Minayeva and J. Hopwood, Langmuir probe diagnostics of
a microfabricated inductively coupled plasma-on-a-chip, J.
Appl. Phys. 94, 2821 (2003).
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O. Minayeva and J. Hopwood, Microfabricated inductively
coupled plasma on a chip for molecular SO2 detection: a
comparison between global model and optical emission
spectrometry, J. Anal. At. Spectr. 18, 856 (2003).
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F. Iza and J. Hopwood, Low-power microwave plasma source
based on a microstrip split-ring resonator, IEEE Trans.
Plasma Sci. 31 782 (2003).
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O. Minayeva and J. Hopwood Emission spectroscopy using a
microfabricated inductively coupled plasma on a chip, J.
Anal. At. Spect. 17, 1103 (2002).
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F. Iza and J. Hopwood, Influence of operating frequency
and coupling coefficient on the efficiency of microfabricated
inductively coupled plasma sources, Plasma Sources Science
and Technology 11, 229 (2002).
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X. Yang and J. Hopwood, et al.,
Plasma Etching of Cesium
Iodide, J. Vac. Sci. Technol. A, 20(1) 132-137 (2002).
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K. Tao, D. Mao, and J. Hopwood,
Ionized Physical Vapor
Deposition of Titanium Nitride: A Global Plasma Model, J.
Appl. Phys., 91(7), 4040-4048 (2002).
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D. Mao, K. Tao, and J. Hopwood,
Ionized Physical Vapor
Deposition of Titanium Nitride: Plasma and Film
Characterization, J. Vac. Sci. Technol. A 20(2) 379-387
(2002).
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J. Hopwood, O. Minayeva, and Y. Yin,
Fabrication and
characterization of a 5-mm inductively coupled plasma generator,
Journal of Vacuum Science and Technology B, 18(5),
2446-2451, (2000).
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J. Hopwood,
A Microfabricated Inductively Coupled Plasma
Generator, Journal of Microelectromechanical Systems, 9(3),
309-313, (2000).
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Ionized Physical Vapor Deposition, J. Hopwood, ed.,
Thin Film Series Vol. 27, (Academic Press, San Diego, 2000).
ISBN 0-12-533027-8
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Y. Yin, J. Messier, and J. Hopwood,
Miniaturized
inductively coupled plasma sources, IEEE Transactions on
Plasma Science, 27(5), 1516-1524, 1999.
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G. Zhong and J. Hopwood, Ionized titanium deposition into
high aspect ratio vias and trenches, Journal of Vacuum
Science and Technology, B 17(2), 405-409 (1999).
-
J. Hopwood,
Ionized
physical vapor deposition of integrated circuit interconnects,
invited tutorial,
Physics of Plasmas 5(5) 1624 (1998).
-
M. Dickson, G. Zhong, and J. Hopwood,
Radial uniformity
of an external-coil ionized physical vapor deposition source,
Journal of Vacuum Science and Technology A 16(2), 523 (1998).
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P. Sailer, P. Singhal, J. Hopwood, D. Kaeli, P.M. Zavracky,
K. Warner and D.P. Vu, Creating 3D circuits using transferred
films, IEEE Circuits and Devices Magazine 13(6),
27-30(1997).
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J. Hopwood, "Plasma Assisted Deposition," in
The Handbook
of Nanophase Materials, A. Goldstein, Ed., pp. 141-198
(Marcel-Dekker, New York, 1997). ISBN 0-8247-9469-9
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M. Dickson and J. Hopwood, Axially-resolved study of
highly ionized physical vapor deposition, J. Vac. Sci.
Technol. A 15(4), 2307 (1997).
-
M. Dickson, F. Qian, and J. Hopwood,
Quenching of
electron temperature and electron density in ionized physical
vapor deposition, J. Vac. Sci. Technol. A 15(2), 340 (1997).
-
N. Forgotson, V. Khemka, and J. Hopwood,
Inductively
coupled plasma for polymer etching of 200 mm wafers, J. Vac.
Sci. Technol. B 14(2), 732 (1996).
-
J. Hopwood and F. Qian, Mechanisms for highly ionized
magnetron sputtering, J. Appl. Phys. 78(2), 758 (1995).
-
J. Hopwood, Planar rf induction plasma coupling
efficiency, Plasma Sources Sci. Technol. 3, 460 (1994).
-
D. L. Pappas and J. Hopwood, Deposition of diamond-like
carbon in a planar inductively coupled plasma, J. Vac. Sci.
Technol. A 12(4), 1576 (1994).
-
S.M. Rossnagel and J. Hopwood, Metal ion deposition from
ionized magnetron sputtering discharge, J. Vac. Sci. Technol.
B 12(1), 449 (1994).
-
S.M. Rossnagel and J. Hopwood, Magnetron sputter
deposition with high levels of metal ionization, Appl. Phys.
Lett. 63, 3285 (1993).
-
J. Hopwood, Ion bombardment energy distributions in a low
pressure rf induction plasma, Appl. Phys. Lett. 62, 940
(1993).
-
J. Hopwood, C.R. Guarnieri, S. J. Whitehair, and J. J.
Cuomo, Electromagnetic fields in an rf induction plasma,
J. Vac. Sci. Technol. A 11, 147 (1993).
-
J. Hopwood, C.R. Guarnieri, S.J. Whitehair, and J.J. Cuomo,
Langmuir probe measurements in an rf induction plasma, J.
Vac. Sci. Technol. A 11(1), 152 (1993).
-
J. Hopwood, Review of inductively coupled plasmas for
plasma processing, invited, Plasma Sources Sci.
Technol. 1, 109 (1992).
-
J. Hopwood and J. Asmussen, Neutral gas temperatures in a
multipolar electron cyclotron resonance plasma, Appl. Phys.
Lett. 58, 2473 (1991).
-
J. Hopwood, D.K. Reinhard, and J. Asmussen,
Charged
particle densities and energy distributions in a multipolar ECR
microwave plasma etching source, J. Vac. Sci. Technol. A
8(4), 3103 (1990).
-
J. Hopwood, R. Wagner, D.K. Reinhard, and J. Asmussen,
Electric fields in a microwave-cavity
electron-cyclotron-resonant plasma source, J. Vac. Sci.
Technol. A 8(3), 2904 (1990).
-
J. Asmussen, J. Hopwood and F.C. Sze,
A 915 MHz/2.45 GHz
ECR plasma source for large area ion beam and plasma processing,
Rev. Sci. Instrum. 61(1), 250 (1990).
-
J. Hopwood, D.K. Reinhard and J. Asmussen,
Experimental
conditions for uniform anisotropic etching of silicon with a
microwave ECR plasma, J. Vac Sci. Technol. B 6(6), 1896
(1988).
-
J. Hopwood, D.K. Reinhard, and J. Asmussen,
Plasma
etching with a microwave cavity plasma disk source, J. Vac.
Sci. Technol. B 6(1), 268 (1988).
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Resonant radio frequency wave coupler apparatus using
higher modes, J. Asmussen and J. Hopwood, U.S. Patent
5,081,398 (January 12, 1992)
-
Radio frequency induction plasma processing system
utilizing a uniform-field coil, J. Hopwood, C.R. Guarnieri,
S.J. Whitehair, and J.J. Cuomo, U.S. Patent 5,280,154 (January
18, 1994).
-
Apparatus for enhanced inductive coupling to plasmas with
reduced sputter contamination, J. Hopwood, C.R. Guarnieri,
and J.J. Cuomo, U.S. Patent 5,433,812 (July 18, 1995).
-
Method for enhanced inductive coupling to plasmas with
reduced sputter contamination, J.J. Cuomo, C.R. Guarnieri,
and J. Hopwood, U.S. Patent 5,622,635 (April 22, 1997).
-
Radio frequency induction plasma processing system
utilizing a uniform-field coil, J.J.Cuomo, C.R. Guarnieri,
J. Hopwood, and S.J. Whitehair, European Patent EP 0 553 704 B1
(April 3, 1996).
-
Apparatus and method for enhanced inductive coupling to
plasmas with reduced sputter contaminaton, J.J. Cuomo, C.R.
Guarnieri, and J. Hopwood, European Patent EP 0 607 797 B1 (June
18, 1997).
-
Monolithic miniaturized inductively coupled plasma
source, J. Hopwood ,
U.S.
Patent No. 5,942,855 (August 24, 1999).
-
Method of Coating Edges with Diamond-like carbon, J.
Hopwood and D. L. Pappas, U.S. Patent No. 6,077,542 (June 20,
2000).
-
Low power plasma generator, J. Hopwood and F. Iza, US
Patent 6,917,165, (July 12, 2005).
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