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  • D. Mao, L. Peng, and J. Hopwood, On-wafer Tunable Deposition Rates using Ionized Physical Vapor Deposition , to appear in Plasma Processes and Polymers (Wiley-InterScience, 2006).

  • J. Hopwood, F. Iza, S. Coy, and D. Fenner, A microfabricated atmospheric-pressure microplasma source operating in air, Journal of Physics D: Applied Physics, Vol. 38, 1698-1703 (2005).

  • Felipe Iza and Jeffrey A. Hopwood, Split-ring Resonator Microplasma: Microwave Model, Plasma Impedance and Power Efficiency, Plasma Sources - Science and Technology (Institute of Physics), Vol.14, 397-406 (2005).

  • Felipe Iza and Jeffrey A. Hopwood, Self-organized filaments, striations and other non-uniformities in non-thermal atmospheric microwave excited microdischarges, IEEE Transactions on Plasma Science, Vol. 33(2) 306-307 (2005).

  • Xiaoji Yang and Jeffrey A. Hopwood, Physical mechanisms for anisotropic plasma etching of cesium iodide, Journal of Applied Physics, Vol. 96(9), 4800-4806 (2004).

  • J. Hopwood and F. Iza, Ultrahigh frequency microplasmas from 1 Pascal to 1 Atmosphere, Journal of Analytical Atomic Spectrometry, Vol. 19, 1145-1150 (2004).

  • D. Mao and J. Hopwood, Ionized Physical Vapor Deposition of Titanium Nitride: A Deposition Model, Journal of Applied Physics, Vol. 96(1), 820-828 (2004).

  • F. Iza and J. Hopwood, Rotational, vibrational and excitation temperatures of a microwave-frequency microplasma, IEEE Trans. Plasma Sci. 32(2), (2004) (to appear)

  • J. Hopwood and T. Mantei, Application-driven development of plasma source technology, J. Vac. Sci. Technol. A 21, S139 (2003).

  • O. Minayeva and J. Hopwood, Langmuir probe diagnostics of a microfabricated inductively coupled plasma-on-a-chip, J. Appl. Phys. 94, 2821 (2003).

  • O. Minayeva and J. Hopwood, Microfabricated inductively coupled plasma on a chip for molecular SO2 detection: a comparison between global model and optical emission spectrometry, J. Anal. At. Spectr. 18, 856 (2003).

  • F. Iza and J. Hopwood, Low-power microwave plasma source based on a microstrip split-ring resonator, IEEE Trans. Plasma Sci. 31 782 (2003).

  • O. Minayeva and J. Hopwood Emission spectroscopy using a microfabricated inductively coupled plasma on a chip, J. Anal. At. Spect. 17, 1103 (2002).

  • F. Iza and J. Hopwood, Influence of operating frequency and coupling coefficient on the efficiency of microfabricated inductively coupled plasma sources, Plasma Sources Science and Technology 11, 229 (2002).

  • X. Yang and J. Hopwood, et al., Plasma Etching of Cesium Iodide, J. Vac. Sci. Technol. A, 20(1) 132-137 (2002).

  • K. Tao, D. Mao, and J. Hopwood, Ionized Physical Vapor Deposition of Titanium Nitride: A Global Plasma Model, J. Appl. Phys., 91(7), 4040-4048 (2002).

  • D. Mao, K. Tao, and J. Hopwood, Ionized Physical Vapor Deposition of Titanium Nitride: Plasma and Film Characterization, J. Vac. Sci. Technol. A 20(2) 379-387 (2002).

  • J. Hopwood, O. Minayeva, and Y. Yin, Fabrication and characterization of a 5-mm inductively coupled plasma generator, Journal of Vacuum Science and Technology B, 18(5), 2446-2451, (2000).

  • J. Hopwood, A Microfabricated Inductively Coupled Plasma Generator, Journal of Microelectromechanical Systems, 9(3), 309-313, (2000).

  • Ionized Physical Vapor Deposition, J. Hopwood, ed., Thin Film Series Vol. 27, (Academic Press, San Diego, 2000). ISBN 0-12-533027-8

  • Y. Yin, J. Messier, and J. Hopwood, Miniaturized inductively coupled plasma sources, IEEE Transactions on Plasma Science, 27(5), 1516-1524, 1999.

  • G. Zhong and J. Hopwood, Ionized titanium deposition into high aspect ratio vias and trenches, Journal of Vacuum Science and Technology, B 17(2), 405-409 (1999).

  • J. Hopwood, Ionized physical vapor deposition of integrated circuit interconnects, invited tutorial, Physics of Plasmas 5(5) 1624 (1998).

  • M. Dickson, G. Zhong, and J. Hopwood, Radial uniformity of an external-coil ionized physical vapor deposition source, Journal of Vacuum Science and Technology A 16(2), 523 (1998).

  • P. Sailer, P. Singhal, J. Hopwood, D. Kaeli, P.M. Zavracky, K. Warner and D.P. Vu, Creating 3D circuits using transferred films, IEEE Circuits and Devices Magazine 13(6), 27-30(1997).

  • J. Hopwood, "Plasma Assisted Deposition," in The Handbook of Nanophase Materials, A. Goldstein, Ed., pp. 141-198 (Marcel-Dekker, New York, 1997). ISBN 0-8247-9469-9

  • M. Dickson and J. Hopwood, Axially-resolved study of highly ionized physical vapor deposition, J. Vac. Sci. Technol. A 15(4), 2307 (1997).

  • M. Dickson, F. Qian, and J. Hopwood, Quenching of electron temperature and electron density in ionized physical vapor deposition, J. Vac. Sci. Technol. A 15(2), 340 (1997).

  • N. Forgotson, V. Khemka, and J. Hopwood, Inductively coupled plasma for polymer etching of 200 mm wafers, J. Vac. Sci. Technol. B 14(2), 732 (1996).

  • J. Hopwood and F. Qian, Mechanisms for highly ionized magnetron sputtering, J. Appl. Phys. 78(2), 758 (1995).

  • J. Hopwood, Planar rf induction plasma coupling efficiency, Plasma Sources Sci. Technol. 3, 460 (1994).

  • D. L. Pappas and J. Hopwood, Deposition of diamond-like carbon in a planar inductively coupled plasma, J. Vac. Sci. Technol. A 12(4), 1576 (1994).

  • S.M. Rossnagel and J. Hopwood, Metal ion deposition from ionized magnetron sputtering discharge, J. Vac. Sci. Technol. B 12(1), 449 (1994).

  • S.M. Rossnagel and J. Hopwood, Magnetron sputter deposition with high levels of metal ionization, Appl. Phys. Lett. 63, 3285 (1993).

  • J. Hopwood, Ion bombardment energy distributions in a low pressure rf induction plasma, Appl. Phys. Lett. 62, 940 (1993).

  • J. Hopwood, C.R. Guarnieri, S. J. Whitehair, and J. J. Cuomo, Electromagnetic fields in an rf induction plasma, J. Vac. Sci. Technol. A 11, 147 (1993).

  • J. Hopwood, C.R. Guarnieri, S.J. Whitehair, and J.J. Cuomo, Langmuir probe measurements in an rf induction plasma, J. Vac. Sci. Technol. A 11(1), 152 (1993).

  • J. Hopwood, Review of inductively coupled plasmas for plasma processing, invited, Plasma Sources Sci. Technol. 1, 109 (1992).

  • J. Hopwood and J. Asmussen, Neutral gas temperatures in a multipolar electron cyclotron resonance plasma, Appl. Phys. Lett. 58, 2473 (1991).

  • J. Hopwood, D.K. Reinhard, and J. Asmussen, Charged particle densities and energy distributions in a multipolar ECR microwave plasma etching source, J. Vac. Sci. Technol. A 8(4), 3103 (1990).

  • J. Hopwood, R. Wagner, D.K. Reinhard, and J. Asmussen, Electric fields in a microwave-cavity electron-cyclotron-resonant plasma source, J. Vac. Sci. Technol. A 8(3), 2904 (1990).

  • J. Asmussen, J. Hopwood and F.C. Sze, A 915 MHz/2.45 GHz ECR plasma source for large area ion beam and plasma processing, Rev. Sci. Instrum. 61(1), 250 (1990).

  • J. Hopwood, D.K. Reinhard and J. Asmussen, Experimental conditions for uniform anisotropic etching of silicon with a microwave ECR plasma, J. Vac Sci. Technol. B 6(6), 1896 (1988).

  • J. Hopwood, D.K. Reinhard, and J. Asmussen, Plasma etching with a microwave cavity plasma disk source, J. Vac. Sci. Technol. B 6(1), 268 (1988).

Patents
  • Resonant radio frequency wave coupler apparatus using higher modes, J. Asmussen and J. Hopwood, U.S. Patent 5,081,398 (January 12, 1992)

  • Radio frequency induction plasma processing system utilizing a uniform-field coil, J. Hopwood, C.R. Guarnieri, S.J. Whitehair, and J.J. Cuomo, U.S. Patent 5,280,154 (January 18, 1994).

  • Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination, J. Hopwood, C.R. Guarnieri, and J.J. Cuomo, U.S. Patent 5,433,812 (July 18, 1995).

  • Method for enhanced inductive coupling to plasmas with reduced sputter contamination, J.J. Cuomo, C.R. Guarnieri, and J. Hopwood, U.S. Patent 5,622,635 (April 22, 1997).

  • Radio frequency induction plasma processing system utilizing a uniform-field coil, J.J.Cuomo, C.R. Guarnieri, J. Hopwood, and S.J. Whitehair, European Patent EP 0 553 704 B1 (April 3, 1996).

  • Apparatus and method for enhanced inductive coupling to plasmas with reduced sputter contaminaton, J.J. Cuomo, C.R. Guarnieri, and J. Hopwood, European Patent EP 0 607 797 B1 (June 18, 1997).

  • Monolithic miniaturized inductively coupled plasma source, J. Hopwood , U.S. Patent No. 5,942,855 (August 24, 1999).

  • Method of Coating Edges with Diamond-like carbon, J. Hopwood and D. L. Pappas, U.S. Patent No. 6,077,542 (June 20, 2000).

  • Low power plasma generator, J. Hopwood and F. Iza, US Patent 6,917,165, (July 12, 2005).